* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V)
* Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
* ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW
* Broadband Frequency Range: 400-470MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
RA07N4047M Datasheet (62.20 KB)
RA07N4047M
Mitsubishi Electric Semiconductor
62.20 KB
Mitsubishi rf mosfet module.
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECA UTIONS
RA07N4047M
400-470MHz 7.5W 9.6V PORTABLE RADIO BLOCK DIAGRAM.
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