RA07N4047M MITSUBISHI RF MOSFET MODULE

Mitsubishi Electric Semiconductor

Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4047M 400-470MHz 7.5W 9.6V PORTABLE RADIO BLOCK DIAGRAM.
The RA07N4047M is a 7.

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Datasheet Specifications

Part number: RA07N4047M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 62.20 KB
Datasheet: RA07N4047M_MitsubishiElectricSemiconductor.pdf
Description: MITSUBISHI RF MOSFET MODULE

Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V)
* Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
* ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW
* Broadband Frequency Range: 400-470MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

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RA07N4047M MITSUBISHI MOSFET MODULE Mitsubishi Electric Semiconductor

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