RA07N4452M Datasheet, Radio, Mitsubishi Electric Semiconductor

RA07N4452M Features

• Radio
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V)
• Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
• ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20m

PDF File Details

Part number:

RA07N4452M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

61.66kb

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📄 Datasheet

Description:

440-520mhz 7.5w 9.6v portable radio. The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to 520-MHz range. The b

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RA07N4452M

Mitsubishi Electric Semiconductor

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