MGFC45B3436B Datasheet - Mitsubishi Electric

MGFC45B3436B, C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC45B3436B 3.4 * 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-mat

Features

* Class AB operation Internally matched to 50(ohm) system
* High output power Po(SAT)=30W (TYP. ) @f=3.4
* 3.6GHz
* High power gain GLP=11.0dB (TYP. ) @f=3.4
* 3.6GHz
* Distortion ACP=-45dBc (TYP. ) @f=3.4
* 3.6GHz RECOMMENDED BIAS CONDITIONS
* VDS=12V
* ID=0.

MGFC45B3436B_MitsubishiElectric.pdf