MGFC45B3436B C band internally matched power GaAs FET

Mitsubishi Electric

Description

< C band internally matched power GaAs FET > MGFC45B3436B 3.4 * 3.6 GHz BAND / 30W .
The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3. 3.

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Datasheet Specifications

Part number: MGFC45B3436B
Manufacturer: Mitsubishi Electric
File Size: 337.50 KB
Datasheet: MGFC45B3436B_MitsubishiElectric.pdf
Description: C band internally matched power GaAs FET

Features

* Class AB operation Internally matched to 50(ohm) system
* High output power Po(SAT)=30W (TYP. ) @f=3.4
* 3.6GHz
* High power gain GLP=11.0dB (TYP. ) @f=3.4
* 3.6GHz
* Distortion ACP=-45dBc (TYP. ) @f=3.4
* 3.6GHz RECOMMENDED BIAS CONDITIONS
* VDS=12V
* ID=0.

MGFC45B3436B Distributors

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MGFC45B3436B band internally matched power GaAs FET Mitsubishi Electric

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