MGFC45V5964A - C band internally matched power GaAs FET
MGFC45V5964A Features
* Internally matched to 50(ohm) system
* High output power P1dB=32W (TYP.) @f=5.9
* 6.4GHz
* High power gain GLP=9.0dB (TYP.) @f=5.9
* 6.4GHz
* High power added efficiency P.A.E.=33% (TYP.) @f=5.9
* 6.4GHz
* Low distortion [item -51] IM3=-45dBc (TYP.) @Po=34.5dB
