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MGFC45V5964A C band internally matched power GaAs FET

MGFC45V5964A Description

< C band internally matched power GaAs FET > MGFC45V5964A 5.9 * 6.4 GHz BAND / 32W .
The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

MGFC45V5964A Features

* Internally matched to 50(ohm) system
* High output power P1dB=32W (TYP. ) @f=5.9
* 6.4GHz
* High power gain GLP=9.0dB (TYP. ) @f=5.9
* 6.4GHz
* High power added efficiency P. A. E. =33% (TYP. ) @f=5.9
* 6.4GHz
* Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=34.5dB

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band internally matched power GaAs FET Mitsubishi
Mitsubishi MGFC45V5964A-like datasheet