RD12MVP1 Datasheet, Transistor, Mitsubishi Electric

RD12MVP1 Features

• Transistor
• High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
• High Efficiency: 55%min. (175MHz)
• No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.

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Part number:

RD12MVP1

Manufacturer:

Mitsubishi Electric

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES

RD12MVP1 Application

• Applications OUTLINE DRAWING FEATURES
• High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
• High Efficiency: 55%min. (175MHz)

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RD12MVP1

Mitsubishi Electric

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