Datasheet4U Logo Datasheet4U.com

RD12MVP1 - Silicon MOSFET Power Transistor

RD12MVP1 Description

www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (.
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. High Power Ga.

RD12MVP1 Features

* High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
* High Efficiency: 55%min. (175MHz)
* No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate

📥 Download Datasheet

Preview of RD12MVP1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RD12MVP1
Manufacturer
Mitsubishi Electric
File Size
150.12 KB
Datasheet
RD12MVP1_MitsubishiElectric.pdf
Description
Silicon MOSFET Power Transistor

📁 Related Datasheet

  • RD12M - ZENER DIODES 200 mW 3-PIN MINI MOLD (NEC)
  • RD12MW - ZENER DIODES 200 mW 3-PIN MINI MOLD (NEC)
  • RD120E - 500 mW DHD ZENER DIODE DO-35 (NEC)
  • RD120EB - ZENER DIODES (SEMTECH)
  • RD120FM - SURFACE MOUNT SILICON ZENER DIODES (SunMate)
  • RD120S - ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD (NEC)
  • RD12E - Zener diode (Excel Semiconductor)
  • RD12EB - ZENER DIODES (SEMTECH)

📌 All Tags

Silicon MOSFET Power Transistor Mitsubishi Electric
Mitsubishi Electric RD12MVP1-like datasheet