* High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
* High Efficiency: 55%min. (175MHz)
* No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate
RD12MVP1 Datasheet (150.12 KB)
RD12MVP1
Mitsubishi Electric
150.12 KB
Silicon mosfet power transistor.
www.DataSheet4U.com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
(a) 0.2+/-0.05 0.65+/-0.2 (c) (.
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