RD12MVP1 Silicon MOSFET Power Transistor

Mitsubishi Electric

Description

www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (.
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. High Power Ga.

📥 Download Datasheet

RD12MVP1 Datasheet Preview — Preview of RD12MVP1 PDF

Datasheet Specifications

Part number: RD12MVP1
Manufacturer: Mitsubishi Electric
File Size: 150.12 KB
Datasheet: RD12MVP1_MitsubishiElectric.pdf
Description: Silicon MOSFET Power Transistor

Features

* High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
* High Efficiency: 55%min. (175MHz)
* No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate

RD12MVP1 Distributors

📁 Related Datasheet

RD12M RD12MW RD120E RD120EB RD120FM RD120S

📌 All Tags

RD12MVP1 Silicon MOSFET Power Transistor Mitsubishi Electric

Mitsubishi Electric RD12MVP1-like datasheet

RD12MVS1

RD16HHF1