Datasheet Details
- Part number
- RD12MVP1
- Manufacturer
- Mitsubishi Electric
- File Size
- 150.12 KB
- Datasheet
- RD12MVP1_MitsubishiElectric.pdf
- Description
- Silicon MOSFET Power Transistor
RD12MVP1 Description
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (.
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
High Power Ga.
RD12MVP1 Features
* High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
* High Efficiency: 55%min. (175MHz)
* No gate protection diode
INDEX MARK [Gate]
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate
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