Part number:
RD12MVP1
Manufacturer:
Mitsubishi Electric
File Size:
150.12 KB
Description:
Silicon mosfet power transistor.
RD12MVP1 Datasheet (150.12 KB)
Datasheet Details
RD12MVP1 Features
* High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
* High Efficiency: 55%min. (175MHz)
* No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate
RD12MVP1 Datasheet (150.12 KB)
Datasheet Details
RD12MVP1
Mitsubishi Electric
150.12 KB
Silicon mosfet power transistor.
📁 Related Datasheet
RD12MVS1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD12M ZENER DIODES 200 mW 3-PIN MINI MOLD (NEC)
RD12MW ZENER DIODES 200 mW 3-PIN MINI MOLD (NEC)
RD120E 500 mW DHD ZENER DIODE DO-35 (NEC)
RD120E 500mW PLANAR TYPE SILICON ZENER DIODES (Renesas)
RD120EB ZENER DIODES (SEMTECH)
RD120FM SURFACE MOUNT SILICON ZENER DIODES (SunMate)
RD120FM ZENER DIODES (Renesas)
RD12MVP1 Distributor