RD16HHF1 Datasheet, Transistor, Mitsubishi Electric

RD16HHF1 Features

• Transistor High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4 OUTLINE DRAWING 9.1+/-0.7 3.6+/-0.2 2 1.2+/-0.4 0.8+0.10/-0

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RD16HHF1

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Mitsubishi Electric

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>1

RD16HHF1 Application

• Applications FEATURES High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4

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RD16HHF1

Mitsubishi Electric

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