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RD16HHF1 Datasheet - Mitsubishi Electric

RD16HHF1 Silicon MOSFET Power Transistor

RD16HHF1 Features

* High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4 OUTLINE DRAWING 9.1+/-0.7 3.6+/-0.2 2 1.2+/-0.4 0.8+0.10/-0.15 1.3+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. 123 2

RD16HHF1_MitsubishiElectric.pdf

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Datasheet Details

Part number:

RD16HHF1

Manufacturer:

Mitsubishi Electric

File Size:

425.47 KB

Description:

Silicon mosfet power transistor.

RD16HHF1 Distributor

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RD16HHF1 RD16HHF1 Silicon MOSFET Power Transistor Mitsubishi Electric