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MGFC41V3642 C band internally matched power GaAs FET

MGFC41V3642 Description

< C band internally matched power GaAs FET > MGFC41V3642 3.6 * 4.2 GHz BAND / 14W .
The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3. 4.

MGFC41V3642 Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=14W (TYP. ) @f=3.6
* 4.2GHz
* High power gain GLP=12.5dB (TYP. ) @f=3.6
* 4.2GHz
* High power added efficiency P. A. E. =40% (TYP. ) @f=3.6
* 4.2GHz
* Low distortion [item -51] IM3=-45dB

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band internally matched power GaAs FET Mitsubishi
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