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MGFC41V3642

C band internally matched power GaAs FET

MGFC41V3642 Features

* Class A operation Internally matched to 50(ohm) system

* High output power P1dB=14W (TYP.) @f=3.6

* 4.2GHz

* High power gain GLP=12.5dB (TYP.) @f=3.6

* 4.2GHz

* High power added efficiency P.A.E.=40% (TYP.) @f=3.6

* 4.2GHz

* Low distortion [item -51] IM3=-45dB

MGFC41V3642 Datasheet (87.69 KB)

Preview of MGFC41V3642 PDF

Datasheet Details

Part number:

MGFC41V3642

Manufacturer:

Mitsubishi

File Size:

87.69 KB

Description:

C band internally matched power gaas fet.

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MGFC41V3642 band internally matched power GaAs FET Mitsubishi

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