MGFC41V3642 Datasheet - Mitsubishi

MGFC41V3642 C band internally matched power GaAs FET

MGFC41V3642 Features

* Class A operation Internally matched to 50(ohm) system

* High output power P1dB=14W (TYP.) @f=3.6

* 4.2GHz

* High power gain GLP=12.5dB (TYP.) @f=3.6

* 4.2GHz

* High power added efficiency P.A.E.=40% (TYP.) @f=3.6

* 4.2GHz

* Low distortion [item -51] IM3=-45dB

Datasheet Details

MGFC41V3642

Mitsubishi

87.69 KB

C band internally matched power gaas fet.

📁 Related Datasheet

MGFC41V5964 C band internally matched power GaAs FET (Mitsubishi)

MGFC41V6472 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC41V7177 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC40V3742 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC40V3742A 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)

MGFC40V4450 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC40V4450A 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)

MGFC40V5258 C band internally matched power GaAs FET (Mitsubishi)

MGFC40V5964 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC40V5964A 5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)

TAGS

Image Gallery

MGFC41V3642 Distributor