MGFC41V3642 C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC41V3642 3.6 * 4.2 GHz BAND / 14W .
The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3. 4.

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Datasheet Specifications

Part number: MGFC41V3642
Manufacturer: Mitsubishi
File Size: 87.69 KB
Datasheet: MGFC41V3642_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=14W (TYP. ) @f=3.6
* 4.2GHz
* High power gain GLP=12.5dB (TYP. ) @f=3.6
* 4.2GHz
* High power added efficiency P. A. E. =40% (TYP. ) @f=3.6
* 4.2GHz
* Low distortion [item -51] IM3=-45dB

MGFC41V3642 Distributors

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MGFC41V3642 band internally matched power GaAs FET Mitsubishi

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