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MGFC41V3642 Datasheet - Mitsubishi

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MGFC41V3642 C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC41V3642 3.6 * 4.2 GHz BAND / 14W .
The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3. 4.

MGFC41V3642_MitsubishiElectricSemiconductor.pdf

Preview of MGFC41V3642 PDF

Datasheet Details

Part number:

MGFC41V3642

Manufacturer:

Mitsubishi

File Size:

87.69 KB

Description:

C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=14W (TYP. ) @f=3.6
* 4.2GHz
* High power gain GLP=12.5dB (TYP. ) @f=3.6
* 4.2GHz
* High power added efficiency P. A. E. =40% (TYP. ) @f=3.6
* 4.2GHz
* Low distortion [item -51] IM3=-45dB

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