MGFC42V5964 C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC42V5964 5.9 * 6.4 GHz BAND / 16W .
The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

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Datasheet Specifications

Part number: MGFC42V5964
Manufacturer: Mitsubishi
File Size: 53.61 KB
Datasheet: MGFC42V5964_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=16W (TYP. ) @f=5.9
* 6.4GHz
* High power gain GLP=9dB (TYP. ) @f=5.9
* 6.4GHz
* High power added efficiency P. A. E. =31% (TYP. ) @f=5.9
* 6.4GHz
* Low distortion [item -51] IM3=-45dBc (

MGFC42V5964 Distributors

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MGFC42V5964 band internally matched power GaAs FET Mitsubishi

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