MGFC5212 - K-Band 2-Stage Power Amplifier

Mitsubishi

Datasheet Details

Part number	MGFC5212
Manufacturer	Mitsubishi
File Size	33.16 KB
Description	K-Band 2-Stage Power Amplifier
Datasheet	MGFC5212_MitsubishiElectricSemiconductor.pdf

The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) .

RF frequency : 24.5 to 26.5 GHz Linear gain : ≥ 13 dB P1dB : ≥ 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA In Out Vd1 Vd2.

📁 MGFC5212 Similar Datasheet

MGFC39V5867 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V3742 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V4450 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V5964 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V6472 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V7177 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC42V5867 - 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
MGFC42V5964A - C band internally matched power GaAs FET (Mitsubishi Electric)

Other Datasheets by Mitsubishi

Published: Apr 29, 2005 |