MGFC39V5867 Datasheet, Fet, Mitsubishi Electric

✔ MGFC39V5867 Features

Class A operation Internally matched to 50(ohm) system
High output power P1dB=8W (TYP.) @f=5.8
6.75GHz
High power gain GLP=9dB (TYP.) @f=5.8
6.75GHz APPLICATION

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Part number:

MGFC39V5867

Manufacturer:

Mitsubishi Electric

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100.28 KB

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📄 Datasheet

Description:

C band internally matched power gaas fet. The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 * 6.75 GHz band amplifiers. The

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MGFC39V5867 band internally matched power GaAs FET Mitsubishi Electric