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MGFC39V5867 - C band internally matched power GaAs FET

Mitsubishi Electric

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Datasheet Details

Part number	MGFC39V5867
Manufacturer	Mitsubishi Electric
File Size	100.28 KB
Description	C band internally matched power GaAs FET
Datasheet	MGFC39V5867_MitsubishiElectric.pdf

MGFC39V5867 Product details

Description

The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 6.75 GHz band amplifiers.

Features

Class A operation Internally matched to 50(ohm) system.
High output power P1dB=8W (TYP. ) @f=5.8.
6.75GHz.
High power gain GLP=9dB (TYP. ) @f=5.8.
6.75GHz.

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Published: Jul 4, 2007 |