MGFC39V5867 Datasheet - Mitsubishi Electric

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MGFC39V5867 C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC39V5867 5.8 * 6.75 GHz BAND / 8W .
The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

MGFC39V5867_MitsubishiElectric.pdf

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Datasheet Details

Part number:

MGFC39V5867

Manufacturer:

Mitsubishi Electric

File Size:

100.28 KB

Description:

C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=5.8
* 6.75GHz
* High power gain GLP=9dB (TYP. ) @f=5.8

MGFC39V5867 Distributors

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MGFC39V5867 band internally matched power GaAs FET Mitsubishi Electric

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