MGFC39V5867 Datasheet - Mitsubishi Electric

MGFC39V5867 C band internally matched power GaAs FET

MGFC39V5867 Features

* Class A operation Internally matched to 50(ohm) system

* High output power P1dB=8W (TYP.) @f=5.8

* 6.75GHz

* High power gain GLP=9dB (TYP.) @f=5.8

* 6.75GHz APPLICATION

* VSAT 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2

Datasheet Details

MGFC39V5867

Mitsubishi Electric

100.28 KB

C band internally matched power gaas fet.

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