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MGFC39V7177A C band internally matched power GaAs FET

MGFC39V7177A Description

< C band internally matched power GaAs FET > MGFC39V7177A 7.1 * 7.7 GHz BAND / 8W 11.3 .
The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7. 7.

MGFC39V7177A Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=7.1
* 7.7GHz
* High power gain GLP= 8.0dB (TYP. ) @f=7.1
* 7.7GHz
* High power added efficiency P. A. E. =28% (TYP. ) @f=7.1
* 7.7GHz
* Low distortion [item -51] IM3=-45dBc

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band internally matched power GaAs FET Mitsubishi
Mitsubishi MGFC39V7177A-like datasheet