MGFC39V7177A C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC39V7177A 7.1 * 7.7 GHz BAND / 8W 11.3 .
The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7. 7.

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Datasheet Specifications

Part number: MGFC39V7177A
Manufacturer: Mitsubishi
File Size: 86.27 KB
Datasheet: MGFC39V7177A_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=7.1
* 7.7GHz
* High power gain GLP= 8.0dB (TYP. ) @f=7.1
* 7.7GHz
* High power added efficiency P. A. E. =28% (TYP. ) @f=7.1
* 7.7GHz
* Low distortion [item -51] IM3=-45dBc

MGFC39V7177A Distributors

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MGFC39V7177A band internally matched power GaAs FET Mitsubishi

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