MGFC39V5258 C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC39V5258 5.2 * 5.8 GHz BAND / 8W .
The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5. 5.

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Datasheet Specifications

Part number: MGFC39V5258
Manufacturer: Mitsubishi
File Size: 124.06 KB
Datasheet: MGFC39V5258_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=5.2
* 5.8GHz
* High power gain GLP=9.0dB (TYP. ) @f=5.2
* 5.8GHz
* High power added efficiency P. A. E. =30% (TYP. ) @f=5.2

MGFC39V5258 Distributors

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MGFC39V5258 band internally matched power GaAs FET Mitsubishi

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