MGFC39V5964A C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC39V5964A 5.9 * 6.4 GHz BAND / 8W 11.3 .
The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

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Datasheet Specifications

Part number: MGFC39V5964A
Manufacturer: Mitsubishi
File Size: 86.29 KB
Datasheet: MGFC39V5964A_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=5.9
* 6.4GHz
* High power gain GLP=10.5dB (TYP. ) @f=5.9
* 6.4GHz
* High power added efficiency P. A. E. =30% (TYP. ) @f=5.9
* 6.4GHz
* Low distortion [item -51] IM3=-45dBc

MGFC39V5964A Distributors

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MGFC39V5964A band internally matched power GaAs FET Mitsubishi

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