MGFC39V6472A C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC39V6472A 6.4 * 7.2 GHz BAND / 8W 11.3 .
The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6. 7.

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Datasheet Specifications

Part number: MGFC39V6472A
Manufacturer: Mitsubishi
File Size: 205.77 KB
Datasheet: MGFC39V6472A_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=6.4
* 7.2GHz
* High power gain GLP= 9.0dB (TYP. ) @f=6.4
* 7.2GHz
* High power added efficiency P. A. E. =28% (TYP. ) @f=6.4
* 7.2GHz
* Low distortion [item -51] IM3=-45dBc

MGFC39V6472A Distributors

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MGFC39V6472A band internally matched power GaAs FET Mitsubishi

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