MGFC39V7785A C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC39V7785A 7.7 * 8.5 GHz BAND / 8W 11.3 .
The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7. 8.

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Datasheet Specifications

Part number: MGFC39V7785A
Manufacturer: Mitsubishi
File Size: 86.29 KB
Datasheet: MGFC39V7785A_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=8W (TYP. ) @f=7.7
* 8.5GHz
* High power gain GLP= 7.5dB (TYP. ) @f=7.7
* 8.5GHz
* High power added efficiency P. A. E. =27% (TYP. ) @f=7.7
* 8.5GHz
* Low distortion [item -51] IM3=-45dBc

MGFC39V7785A Distributors

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MGFC39V7785A band internally matched power GaAs FET Mitsubishi

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