Datasheet4U Logo Datasheet4U.com

2N2410 Datasheet - Motorola

2N2410 NPN.silicon annular transistor

2N2405 For Specifications, See 2N1893 Data. 2N2410 (SILICON) CASE 31 (TO 5) NPN.silicon annular transistor designed for highspeed, medium-power saturated switchingapplications. Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltaga RBE = 10 ohms VCEO VCER Collector-Base Voltage VeB Emitter-Base voitage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ Te = 25°.

2N2410-Motorola.pdf

Preview of 2N2410 PDF
2N2410 Datasheet Preview Page 2

Datasheet Details

Part number:

2N2410

Manufacturer:

Motorola

File Size:

112.60 KB

Description:

Npn.silicon annular transistor.

📁 Related Datasheet

2N2410 Small Signal Transistors (Central Semiconductor)

2N2411 PNP SILICON TRANSISTOR (Central Corp)

2N2411 (2N2xxx) Small Signal Transistors (ETC)

2N2412 PNP SILICON TRANSISTOR (Central Corp)

2N2412 (2N2xxx) Small Signal Transistors (ETC)

2N2415 GERMANIUM ULTRA-HIGH-FREQUENCY TRANSISTORS (Motorola)

2N2416 GERMANIUM ULTRA-HIGH-FREQUENCY TRANSISTORS (Motorola)

2N2417 SILICON UNIJUNCTION TRANSISTOR (Digitron Semiconductors)

TAGS

2N2410 2N2410 NPN.silicon annular transistor Motorola

2N2410 Distributor