2N2410 - NPN.silicon annular transistor
2N2405 For Specifications, See 2N1893 Data.
2N2410 (SILICON) CASE 31 (TO 5) NPN.silicon annular transistor designed for highspeed, medium-power saturated switchingapplications.
Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltaga RBE = 10 ohms VCEO VCER Collector-Base Voltage VeB Emitter-Base voitage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ Te = 25°
