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2N2405 - NPN silicon annular transistors

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Part number 2N2405
Manufacturer Motorola
File Size 105.23 KB
Description NPN silicon annular transistors
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1893 2N (SILICON) 2N240S NPN silicon annular transistors designed for mediumpower amplifier and switching applications. CASE 31 (TO-5) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25"C Derate above 25"C Total Device Dissipation @ TC - 25"C Derate above 25"C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCS VES IC PD PD T J' T stg 2N1893 2N240S Unit 80 90 Vde 100 140 Vde 120 Vde 7.0 Vde 0.5 1.0 Ade 0.8 1.0 4.57 5.71 3.0 5.0 17.2 28.6 -65 to +200 Watt mW/'C Watts mW/'C 'c THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case Thermal Resistance.
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