2N2476 - NPN Transistor
2N2476 (SILICON) 2N2477 NPN silicon annular transistors designed for highspeed, low-power saturated switching applications.
CASE 31 (TO-5) Collector connected td case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Total Device Dissipation @ TA = 25° C PD Derate above 25° C Total Device Dissipation @ T C = 25° C PD Derate above 25° C Operating & Storage Junction Temperature Range T j' Tstg Value 20 60 5.0 0.6 3.4
