2N3279 Datasheet (Motorola) - PNP germanium epitaxial mesa transistors

2N3279, PNP germanium epitaxial mesa transistors

2N3279 thru 2N3282 (GERMANIUM) CASE 20 (10 72) PNP germanium epitaxial mesa transistors for highgain, low-noise amplifier, oscillator, mixer and frequency multiplier applications.

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25° C Derate above 25°C Ope-rating and Storage Junction Temperature Range Symbol VCEO VCES VCB VEB IC PD TJ , Tstg 2N3279 2N3280 20 2N3281 2N