BDW47 Datasheet (Motorola) - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDW47, DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDW42/D Darlington Complementary Silicon Power Transistors .

designed for general purpose and low speed switching applications.

High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc.

Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) BDW46 VCEO(sus) = 100 Vdc (min.) BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat)