BDW47G Datasheet - ON Semiconductor

BDW47G Darlington Complementary Silicon Power Transistors

BDW47G Features

* High DC Current Gain

* hFE = 2500 (typ) @ IC = 5.0 Adc.

* Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min)

* BDW46 100 Vdc (min)

* BDW42/BDW47

* Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc

Datasheet Details

BDW47G

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Darlington complementary silicon power transistors.

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