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BDW47 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

ON Semiconductor

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Datasheet Details

Part number	BDW47
Manufacturer	ON Semiconductor ↗
File Size	121.03 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDW47_ONSemiconductor.pdf

BDW47 Product details

Features

High DC Current Gain.
hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
BDW46 100 Vdc (min).
BDW42/BDW47.
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
Monolithic Construction with Built.
In Base Emitter Shunt resistors.
TO.
220AB Compact Package.
Pb.
Free Packages Are Ava.

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Published: Mar 23, 2005 |