Datasheet4U Logo Datasheet4U.com

BDW43 - NPN Transistor

BDW43 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 5A. Low Collector Saturation Vol.

BDW43 Applications

* Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base

📥 Download Datasheet

Preview of BDW43 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDW43
Manufacturer
INCHANGE
File Size
211.15 KB
Datasheet
BDW43-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BDW42G - Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • BDW46G - Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • BDW47 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • BDW47G - Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • BDW48 - (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • BDW21 - Bipolar NPN Device (Seme LAB)
  • BDW21C - Bipolar NPN Device (Seme LAB)
  • BDW22 - Bipolar PNP Device (Seme LAB)

📌 All Tags

INCHANGE BDW43-like datasheet