BDW46G Features
* High DC Current Gain
* hFE = 2500 (typ) @ IC = 5.0 Adc.
* Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min)
* BDW46 100 Vdc (min)
* BDW42/BDW47
* Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
Datasheet Details
BDW46G, BDW42G
82.39 KB
Darlington complementary silicon power transistors.
This datasheet PDF includes multiple part numbers: BDW46G, BDW42G.
Please refer to the document for exact specifications by model.
BDW46G Distributor
📁 Related Datasheet
BDW46 PNP Transistor (INCHANGE)
BDW46 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
BDW46 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
BDW40 NPN Transistor (INCHANGE)
BDW40 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
BDW41 NPN Transistor (INCHANGE)
BDW41 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
BDW42 NPN Transistor (INCHANGE)
