Datasheet4U Logo Datasheet4U.com

BDW41

NPN Transistor

BDW41 General Description

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 5A *Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A *Complement to Type BDW46 *Minimum Lot-to-Lot variations for robust device performa.

BDW41 Datasheet (210.98 KB)

Rating: 1 ★ (2 votes)
Preview of BDW41 PDF

Datasheet Details

Part number:

BDW41

Manufacturer:

INCHANGE

File Size:

210.98 KB

Description:

Npn transistor.

📁 Related Datasheet

BDW40 NPN Transistor (INCHANGE)

BDW40 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

BDW41 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

BDW42 NPN Transistor (INCHANGE)

BDW42 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)

BDW42 SILICON POWER TRANSISTOR (SavantIC)

BDW42 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

BDW42G Darlington Complementary Silicon Power Transistors (ON Semiconductor)

BDW43 NPN Transistor (INCHANGE)

BDW43 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

TAGS

BDW41 NPN Transistor INCHANGE

Image Gallery

BDW41 Datasheet Preview Page 2

BDW41 Distributor