BDW40 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 5A. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: BDW40
Manufacturer: INCHANGE
File Size: 211.17 KB
Datasheet: BDW40-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base C

BDW40 Distributors

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