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MGP4N60E Insulated Gate Bipolar Transistor

MGP4N60E Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N *Channel Enhancement<.

MGP4N60E Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E
* series introduces an Energy
* efficient, ESD protected, and short circuit rugged device.

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Datasheet Details

Part number
MGP4N60E
Manufacturer
Motorola
File Size
124.46 KB
Datasheet
MGP4N60E_MotorolaInc.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor Motorola
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