MGP4N60E Datasheet - Motorola

MGP4N60E Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides.

MGP4N60E Features

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MGP4N60E Datasheet (124.46 KB)