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MGP4N60ED Insulated Gate Bipolar Transistor

MGP4N60ED Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N *Channel Enhancement.

MGP4N60ED Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost. This new E
* series introduces an energy ef

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Datasheet Details

Part number
MGP4N60ED
Manufacturer
Motorola
File Size
131.48 KB
Datasheet
MGP4N60ED-Motorola.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor Motorola
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