MMFT6661T1 Datasheet - Motorola

MMFT6661T1 Medium Power FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS SOT 223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc dc converters, solenoid and relay drivers. The device is housed in the SOT 223 package which is designed for medium power surface mount applications. Silic.

MMFT6661T1 Datasheet (59.77 KB)