MRF141G Datasheet (Motorola) - N-CHANNEL BROADBAND RF POWER MOSFET

MRF141G, N-CHANNEL BROADBAND RF POWER MOSFET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz.

The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Guaranteed Performance at 175 MHz, 28 V: Output Pow

MRF141G Features

* hich is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Som