MRF18060BLSR3
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
- PCS/cellular radio and WLL applications. Specified for GSM1930
- 1990 MHz.
- GSM Performance, Full Frequency Band (1930
- 1990 MHz) Power Gain
- 13 d B (Typ) @ 60 Watts CW Efficiency
- 45% (Typ) @ 60 Watts CW
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
- Excellent Thermal Stability
- Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch...
