MRF422 - RF POWER TRANSISTORS
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF422/D NPN Silicon RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz.
Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% Intermodulation Distortion @ 150 W (PEP) IMD = 30 dB (Min) 100% Tested for Load Mismatch at all Phase Angles with 30:1
