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MTB8N50E TMOS POWER FET

MTB8N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB8N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

MTB8N50E Features

* 14.60 15.88 1.14 1.40 A S
* T
* SEATING PLANE K G D H 3 PL M J DIM A B C D E G H J K S V 0.13 (0.005) T STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN CASE 418B
* 02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Mot

MTB8N50E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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Datasheet Details

Part number
MTB8N50E
Manufacturer
Motorola
File Size
162.71 KB
Datasheet
MTB8N50E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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