MTB8N50E Datasheet (Motorola)

MTB8N50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB8N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB8N50E TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower

MTB8N50E Features

* 14.60 15.88 1.14 1.40 A S

* T

* SEATING PLANE K G D H 3 PL M J DIM A B C D E G H J K S V 0.13 (0.005) T STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN CASE 418B

* 02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Mot