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MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MTW8N60E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolate.

MTW8N60E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTW8N60E
Manufacturer
Motorola
File Size
70.77 KB
Datasheet
MTW8N60E_Motorola.pdf
Description
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

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TMOS POWER FET 8.0 AMPERES 600 VOLTS RDSon 0.55 OHM Motorola
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