BSS123LT1 TMOS FET Transistor

Motorola Inc

BSS123LT1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N *Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 M.

BSS123LT1 Features

* 217. 303
* 675
* 2140 or 1
* 800
* 441
* 2447 JAPAN: Nippon Motorola Ltd. ; Tatsumi
* SPD
* JLDC, 6F Seibu
* Butsuryu
* Center, 3
* 14
* 2 Tatsumi Koto
* Ku, Tokyo 135, Japan. 81
* 3
* 3521
* 8315 Mfax™: RMFAX0

BSS123LT1 Applications

* Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a

📥 Download Datasheet

BSS123LT1 Datasheet Preview — Preview of BSS123LT1 PDF

Datasheet Details

Part number: BSS123LT1
Manufacturer: Motorola Inc
File Size: 93.12 KB
Datasheet: BSS123LT1_MotorolaInc.pdf
Description: TMOS FET Transistor

📁 Related Datasheet

BSS123LT1G - N-Channel Power MOSFET (ON Semiconductor)
BSS123 - N-Channel MOSFET (JCET)
BSS123A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET (Zetex Semiconductors)
BSS123BKN3 - N-Channel MOSFET (Cystech Electonics)
BSS123KN3 - N-Channel Enhancement Mode MOSFET (CYStech)
BSS123N - Small-Signal-Transistor (Infineon Technologies)
BSS123N3 - N-CHANNEL MOSFET (CYStech Electronics)
BSS123W - N-CHANNEL MOSFET (Diodes)

📌 All Tags

TMOS FET Transistor Motorola Inc

Motorola Inc BSS123LT1-like datasheet