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NCE0130 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0130
Manufacturer	NCE Power Semiconductor
File Size	310.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0130-NCEPowerSemiconductor.pdf

NCE0130 Product details

Description

The NCE0130 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24 mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |