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NCE0130

N-Channel Enhancement Mode Power MOSFET

NCE0130 Features

* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24 mΩ)

* Special process technology for high ESD capability

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent packag

NCE0130 Datasheet (310.59 KB)

Preview of NCE0130 PDF

Datasheet Details

Part number:

NCE0130

Manufacturer:

NCE Power Semiconductor

File Size:

310.59 KB

Description:

N-channel enhancement mode power mosfet.

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TAGS

NCE0130 N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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