NCE01H16 Datasheet, Mosfet, NCE Power Semiconductor

NCE01H16 Features

• Mosfet
• VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE01H16

Manufacturer:

NCE Power Semiconductor

File Size:

324.71kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE01H16 Application

• Applications Pb Free Product NCE01H16 General Features
• VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ)
• High density

TAGS

NCE01H16

NCE Power Semiconductor

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