NCE01P03S Datasheet, Mosfet, NCE Power Semiconductor

NCE01P03S Features

• Mosfet
• VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.5V (Typ:200mΩ)
• Super high dense cell design
• Advanced trench process techno

PDF File Details

Part number:

NCE01P03S

Manufacturer:

NCE Power Semiconductor

File Size:

346.54kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01P03S Application

• Applications It is ESD protested. General Features
• VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.5V (

TAGS

NCE01P03S

NCE Power Semiconductor

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