NCE01P18L Datasheet, Mosfet, NCE Power Semiconductor

NCE01P18L Features

• Mosfet
• VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
• Super high dense cell design
• Advanced trench process technology
• Reliable and rugged

PDF File Details

Part number:

NCE01P18L

Manufacturer:

NCE Power Semiconductor

File Size:

298.66kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01P18L Application

• Applications It is ESD protested. General Features
• VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
• Super high dense

TAGS

NCE01P18L

NCE Power Semiconductor

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