NCE01P18 Datasheet, Mosfet, NCE Power Semiconductor

NCE01P18 Features

  • Mosfet
  • VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged

PDF File Details

Part number:

NCE01P18

Manufacturer:

NCE Power Semiconductor

File Size:

324.89kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

Datasheet Preview: NCE01P18 📥 Download PDF (324.89kb)
Page 2 of NCE01P18 Page 3 of NCE01P18

NCE01P18 Application

  • Applications It is ESD protested. General Features
  • VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
  • Super high dense

TAGS

NCE01P18
P-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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Stock and price

Wuxi NCE Power Co Ltd
NCE P-Channel Enhancement Mode Power MOSFET
Win Source Electronics
NCE01P18K
7150 In Stock
Qty : 1280 units
Unit Price : $0.23
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