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NCE3415Y - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3415Y
Manufacturer	NCE Power Semiconductor
File Size	253.14 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3415Y-NCEPowerSemiconductor.pdf

NCE3415Y Product details

Description

The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

Features

VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin Assignment.

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Published: Jun 2, 2018 |