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NCE3417 - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3417
Manufacturer	NCE Power Semiconductor
File Size	275.08 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3417-NCEPowerSemiconductor.pdf

NCE3417 Product details

Description

The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin Assignment.

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Published: Jun 2, 2018 |