NCE60P04R Datasheet, Mosfet, NCE Power Semiconductor

NCE60P04R Features

• Mosfet
• VDS =-60V,ID =-4.3A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage

PDF File Details

Part number:

NCE60P04R

Manufacturer:

NCE Power Semiconductor

File Size:

329.00kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suite

NCE60P04R Application

• Applications General Features
• VDS =-60V,ID =-4.3A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
• High density cell desig

TAGS

NCE60P04R

NCE Power Semiconductor

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