NCE60P12K Datasheet, Mosfet, NCE Power Semiconductor

NCE60P12K Features

• Mosfet
• VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage

PDF File Details

Part number:

NCE60P12K

Manufacturer:

NCE Power Semiconductor

File Size:

413.54kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suite

NCE60P12K Application

• Applications General Features
• VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
• High density cell design

TAGS

NCE60P12K

NCE Power Semiconductor

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