NCE60P04Y Datasheet, Mosfet, NCE Power Semiconductor

NCE60P04Y Features

• Mosfet
• VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage a

PDF File Details

Part number:

NCE60P04Y

Manufacturer:

NCE Power Semiconductor

File Size:

345.47kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suite

NCE60P04Y Application

• Applications General Features
• VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
• High density cell design

TAGS

NCE60P04Y

NCE Power Semiconductor

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