NCE60P50 Datasheet, Mosfet, NCE Power Semiconductor

NCE60P50 Features

• Mosfet
• VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good s

PDF File Details

Part number:

NCE60P50

Manufacturer:

NCE Power Semiconductor

File Size:

305.31kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited

NCE60P50 Application

• Applications General Features
• VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
• High density cell design for ultra low Rdson

TAGS

NCE60P50

NCE Power Semiconductor

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