NCE60P06S Datasheet, Mosfet, NCE Power Semiconductor

NCE60P06S Features

• Mosfet
• VDS =-60V,ID =-6A RDS(ON) <50mΩ @ VGS=-10V Schematic diagram
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and curre

PDF File Details

Part number:

NCE60P06S

Manufacturer:

NCE Power Semiconductor

File Size:

390.41kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE60P06S Application

• Applications General Features
• VDS =-60V,ID =-6A RDS(ON) <50mΩ @ VGS=-10V Schematic diagram
• High density cell design for ultr

TAGS

NCE60P06S

NCE Power Semiconductor

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