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NCEP0160F Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP0160F Features

* VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram Application

* DC/DC Converter

* Ideal for

NCEP0160F General Description

The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

NCEP0160F Datasheet (445.16 KB)

Preview of NCEP0160F PDF

Datasheet Details

Part number:

NCEP0160F

Manufacturer:

NCE Power Semiconductor

File Size:

445.16 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP0160F N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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