NCEP038N10GU Datasheet - NCE Power Semiconductor

NCEP038N10GU N-Channel Super Trench II Power MOSFET

The NCEP038N10GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit.

NCEP038N10GU Features

* VDS =100V,ID =135A RDS(ON)=3.45mΩ (Typ.) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schemat

NCEP038N10GU-NCEPowerSemiconductor.pdf