NCEP039N10 N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Description

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NCEP039N10
Manufacturer: NCE Power Semiconductor
File Size: 334.43 KB
Datasheet: NCEP039N10-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
* Pb-free Mold Compound 100% UIS TES

NCEP039N10 Distributors

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NCEP039N10 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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