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NCEP039N10 Datasheet - NCE Power Semiconductor

N-Channel Super Trench II Power MOSFET

NCEP039N10 Features

* VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* Pb-free Mold Compound 100% UIS TES

NCEP039N10 General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP039N10 Datasheet (334.43 KB)

Preview of NCEP039N10 PDF

Datasheet Details

Part number:

NCEP039N10

Manufacturer:

NCE Power Semiconductor

File Size:

334.43 KB

Description:

N-channel super trench ii power mosfet.

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TAGS

NCEP039N10 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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